EPITAXIAL-GROWTH OF NAPHTHALOCYANINE THIN-FILMS VACUUM-DEPOSITED ON ALKALI-HALIDES

Citation
H. Yanagi et al., EPITAXIAL-GROWTH OF NAPHTHALOCYANINE THIN-FILMS VACUUM-DEPOSITED ON ALKALI-HALIDES, Journal of applied physics, 73(8), 1993, pp. 3812-3819
Citations number
39
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
8
Year of publication
1993
Pages
3812 - 3819
Database
ISI
SICI code
0021-8979(1993)73:8<3812:EONTVO>2.0.ZU;2-S
Abstract
Epitaxial thin films of naphthalocyanines (Nc's) were prepared on the (001) surface of alkali halide (AX) by a vacuum-deposition technique. Two types of molecular stacking and orientation were found depending o n the molecular structure. Metal-free Nc(H-2Nc) and divalent zinc Nc(Z nNc) took the face-to-face, eclipsed stacking, P orientation, in which their molecular planes came into a parallel contact to the substrate surface. Trivalent chloroaluminum Nc(AlNcCl) and fluorogallium Nc(GaNc F), and tetravalent vanadyl Nc(VONc) took the eclipsed, slipped stacki ng, I orientation, holding their molecular planes slightly inclined to the substrate surface. In the latter orientation an unexpected face-t o-face stacking caused a stacking defect structure. The tetragonal lat tice of the Nc crystals demonstrated five types of commensurate matchi ngs to the ionic lattice of AX, depending on the lattice parameters of the Nc and AX crystals. On NaCl unidirectional AX(001) (4 x 4)R + 45- degrees-Nc was a predominant orientation, and on KCl and KBr bidirecti onal AX(001)(square-root 10 X square-root 10)R +/- 26.5-degrees-Nc was mainly found.