THE EFFECTS OF OXYGEN ON THE ELECTRONIC AND OPTICAL-PROPERTIES OF ALINAS LAYERS LATTICE-MATCHED TO INP SUBSTRATES GROWN BY ATMOSPHERIC-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

AlInAs layers lattice-matched to InP substrates were grown by atmosphe ric-pressure metal-organic chemical vapor deposition. The residual oxy gen concentration determined by secondary ion mass spectrometry ranged from 3 X 10(16) to 3 X 10(19) CM-3 , and was high when the growth tem perature was low or the V/III ratio was low. The oxygen concentration and the residual carrier concentration showed the same dependence on t he V/III ratio in the high V/III ratio region. This suggests that oxyg en is the origin of the residual carrier concentration. Strong correla tions between the oxygen concentration and the photoluminescence inten sity and reverse current through Schottky diodes suggest that oxygen c reates generation-recombination centers in AlInAs layers.