DEFECT BAND BEHAVIOR IN P-CD0.96ZN0.04TE BY HYDROGEN PASSIVATION

Citation
Md. Kim et al., DEFECT BAND BEHAVIOR IN P-CD0.96ZN0.04TE BY HYDROGEN PASSIVATION, Journal of applied physics, 73(8), 1993, pp. 4077-4079
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
8
Year of publication
1993
Pages
4077 - 4079
Database
ISI
SICI code
0021-8979(1993)73:8<4077:DBBIPB>2.0.ZU;2-T
Abstract
Photoluminescence measurements were carried out in order to investigat e the dependence of the optical properties of p-Cd0.96Zn0.04. Te singl e crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.0 4Te was annealed at 500-degrees-C in a Cd atmosphere for 5 h, the lumi nescence due to the recombination of the electrons in the conduction b and with acceptors (eA-degrees) and to the donor-acceptor pair (DAP) t ransitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, t he intensity of the exciton luminescence increased so that the (eA-deg rees) and DAP peaks related to the Cd vacancies disappeared, and the d efect band in the low energy range between 1.4 and 1.5 eV also vanishe d. These results indicate that hydrogen atoms passivated not only shal low donors but also deep acceptor impurities and that the hydrogen ato ms were separated from the hydrogenated samples at 400-degrees-C due t o their thermal energy.