FORMATION OF METALLIC, CRYSTALLINE NISI2 THIN-FILM ON AMORPHOUS SIO2 SI/

Thin metallic, oriented crystalline NiSi2 filMs that are suitable for additional epitaxial growth have been formed on amorphoUS SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by co mbining the separation by implantation of oxygen process and e-beam ev aporation techniques. The results are comparable with NiSi2 films form ed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.