DIFFERENTIAL CONDUCTANCE OF A TUNNELING POINT-CONTACT BETWEEN AN ORDINARY METAL AND MARGINAL-FERMI-LIQUID METAL

We have calculated a differential conductance as a function of applied voltage for a ''tunneling'' point contact (i.e. point contact with an insulating barrier at the interface) between an ordinary metal and sy stem described as marginal Fermi liquid. Obtained differential conduct ance is nearly proportional to the absolute value of the applied volta ge for positive as well as negative bias (positive bias corresponds to the marginal Fermi liquid being positive), but with different proport ionality factors. If the electronic ''band'' dispersion relation for a marginal Fermi liquid is chosen in a simple ''particle'' form, the sl ope of the differential conductance for positive bias is greater then the one for negative bias. Situation is opposite for the case when the ''band'' dispersion relation is chosen in a simple ''hole'' form. But for the both cases, the slope of the differential conductance increas es with increasing coupling constant appearing in the one-particle sel f-energy of the marginal Fermi liquid.