THRESHOLD IR PHOTODETECTORS AND MATRICES

Authors
KHRYAPOV VT PONOMARENKO VP BUTKEVICH VG TAUBKIN II STAFEEV VI POPOV SA OSIPOV VV
Citation
Vt. Khryapov et al., THRESHOLD IR PHOTODETECTORS AND MATRICES, Soviet journal of optical technology, 59(12), 1992, pp. 780-788
Citations number
NO
Categorie Soggetti
Optics
Journal title
Soviet journal of optical technology → ACNP
ISSN journal
00385514
Volume
59
Issue
12
Year of publication
1992
Pages
780 - 788
Database
ISI
SICI code
0038-5514(1992)59:12<780:TIPAM>2.0.ZU;2-I
Abstract
Experimental and theoretical studies of photosensitive semiconductor s tructures as well as present-day semiconductor photoresistors and phot odiodes based on polycrystalline and single-crystal materials, multila yer structures, and superlattices for the spectral intervals from the visible to the far-IR are described. The characteristics of multieleme nt photodetectors based on lead chalcogenides, germanium and silicon, III-V compounds, and CdHgTe are presented.