SURFACE-TOPOGRAPHY CHANGES INDUCED BY CHEMICAL VAPOR-DEPOSITION OF ALUMINUM ON AL(111)

Authors
HINCH BJ DOAK RB DUBOIS LH
Citation
Bj. Hinch et al., SURFACE-TOPOGRAPHY CHANGES INDUCED BY CHEMICAL VAPOR-DEPOSITION OF ALUMINUM ON AL(111), Surface science, 286(3), 1993, pp. 261-274
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
286
Issue
3
Year of publication
1993
Pages
261 - 274
Database
ISI
SICI code
0039-6028(1993)286:3<261:SCIBCV>2.0.ZU;2-W
Abstract
Aluminum was deposited by chemical vapor deposition (CVD) on an Al(111 ) surface, using trimethylamine alane (TMAA). The precursor dissociate s on the surface and the products (trimethylamine and hydrogen) desorb at temperatures in excess of 350 K. Surface topographical changes are observed during the CVD process by thermal energy atomic helium scatt ering. Growth at 400 K proceeds by a step-flow mechanism.