NOVEL DIFFERENTIALLY STRAINED P-DOPED QUANTUM-WELL INFRARED DETECTOR

We propose a differentially strained p-doped quantum well infrared (IR ) photodetector that achieves high performance specifications. We exam ine key device and material considerations for such a detector for nea r 10 mum detection. We calculate that through differential strain, thi s novel detector has improved gain and substantially reduced dark curr ent over previous quantum well IR photodetectors, while being able to detect normal incident light.