ON THE ELECTRICAL-CONDUCTION IN THE INTERPOLYSILICON DIELECTRIC LAYERS

Up to now, to reduce the low field electrical conductivity of interpol ysilicon dielectrics used in EEPROM devices, the roughness of the poly -SiO2 interface has been decreased in two ways: 1) by increasing the t emperature of oxidation and doping of polysilicon combined with the si licon (undoped or in-situ doped) low-pressure chemical vapor depositio n (LPCVD) in the amorphous phase, or 2) by the use of LPCVD high-tempe rature oxide (HTO) deposited over polycrystalline silicon. In this pap er we combine the advantages of each method and present the electrical conduction results of the interpoly structure based on LPCVD smooth s urface polysilicon and LPCVD HTO SiO2. The data are interpreted in ter ms of the Fowler-Nordheim mechanism.