CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED

Authors
HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation
Jc. Hsieh et al., CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED, IEEE electron device letters, 14(5), 1993, pp. 222-224
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
5
Year of publication
1993
Pages
222 - 224
Database
ISI
SICI code
0741-3106(1993)14:5<222:COMCOB>2.0.ZU;2-D
Abstract
The characteristics of BF2 or B implanted polysilicon gate MOS capacit ors with and without POCl3 co-doped were studied in this letter. We fo und that the gate oxide thickness was increased very significantly wit h the number of high-temperature thermal cycles for BF2 implanted poly silicon MOS capacitors. But this phenomenon will not be found in POCl3 co-doped polysilicon MOS capacitors. A model to interpret this phenom enon well was established according to the results of SIMS measurement .