DEGRADATION OF N2O-ANNEALED MOSFET CHARACTERISTICS IN RESPONSE TO DYNAMIC OXIDE STRESSING

The performance of n-MOSFET's with furnace N2O-annealed gate oxides un der dynamic Fowler-Nordheim bipolar stress was studied and compared wi th that of conventional oxide (OX). Time-dependent dielectric breakdow n at high frequency was shown to be improved for the N2O-annealed devi ces compared with that for devices with OX. In addition, a smaller V(t ) shift for nitrided samples after stress was found. The shift decreas ed with increasing stressing frequency and annealing temperature. Meas urements of both G(m) and D(it) revealed a ''peak'' frequency at which the degradation was the worst. A hole trapping/migration model has be en proposed to explain this.