EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES

Authors
KIM J JOSHI AB YOON GW KWONG DL
Citation
J. Kim et al., EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES, IEEE electron device letters, 14(5), 1993, pp. 265-267
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
5
Year of publication
1993
Pages
265 - 267
Database
ISI
SICI code
0741-3106(1993)14:5<265:EORSNO>2.0.ZU;2-G
Abstract
Effects of residual surface nitrogen, remaining on the Si surface afte r stripping off tunneling oxynitrides (N2O-grown or NH3-nitrided oxide s), on the quality of the regrown gate oxides are studied. Residual su rface nitrogen is observed to reduce the breakdown field and degrade t he TDDB characteristics of the subsequently grown gate oxides. Results show that oxide regrowth in N2O, rather than O2, can significantly su ppress these undesirable effects.