A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICES

A calibrated and physically based mobility model is developed for thre e-dimensional simulation of submicron metal-oxide-semiconductor (MOS) devices, in which the inversion layer mobility is emphasized. This inv ersion layer mobility can be generalized into a local form, i.e., expr essed as functions of the local electric field at each grid point, so that it is well suited for device simulation. The resulting 3-D mobili ty model accurately characterizes the significant physical scattering effects including the Coulomb screening effect, quantum channel broade ning effect, surface roughness scattering, structure-induced lateral s urface scattering and velocity saturation limited effects. Results sho w that this new model can be incorporated into device simulators for a ccurately predicting drain currents of submicron LDD MOS devices. More over, the results compare more favorably with the experimental data th an do those for other reported models.