DOUBLE HETEROSTRUCTURE PB1-XSRXS PB1-YSRYS LASERS PREPARED USING HOT WALL EPITAXY/

Authors
MOHAMMADNEJAD S AIKAWA K ISHIDA A FUJIYASU H
Citation
S. Mohammadnejad et al., DOUBLE HETEROSTRUCTURE PB1-XSRXS PB1-YSRYS LASERS PREPARED USING HOT WALL EPITAXY/, JPN J A P 1, 32(4), 1993, pp. 1658-1660
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
4
Year of publication
1993
Pages
1658 - 1660
Database
ISI
SICI code
Abstract
Pb1-xSrxS/Pb1-ySryS double heterostructure (DH) lasers were prepared f or the first time using a hot wall epitaxy (HWE) system and their oper ating characteristics were determined. Under pulsed measurement condit ions, the operational wavelength for the lasers became as low as 2.07 mum at 140 K. This wavelength is the shortest wavelength ever reported for a IV-VI compound semiconductor laser.