STRUCTURAL AND ELECTRICAL-PROPERTIES OF LEAD-ZIRCONATE-TITANATE THIN-FILMS PREPARED BY MULTITARGET REACTIVE DC MAGNETRON COSPUTTERING

We have investigated the structural and electrical properties of lead- zirconate-titanate (PZT) thin films prepared on Pt/Ti/SiO2/Si substrat es by multitarget reactive DC magnetron cosputtering. Film composition has been controlled by independently varying the DC power applied to the Pb, Zr and Ti targets. A single perovskite phase with a pseudocubi c structure has been obtained with postannealing at 550-degrees-C in o xygen. The structure, composition and chemical state have been examine d as a function of annealing temperature. The 0.65 mum- and 2.1 mum-th ick films annealed at 550-degrees-C have dielectric constants of 178 a nd 497 at 100 kHz, remanent polarizations of 1.7 muC/cm2 and 2.4 muC/c m2 and coercive fields of 7.8 kV/cm and 8.4 kV/cm, respectively.