CHARACTERIZATION OF SB ATOMIC-LAYER-DOPED SI(100) CRYSTAL BY X-RAY STANDING WAVE METHOD

Authors
IZUMI K SAITO A KIKUTA S ZHANG XW
Citation
K. Izumi et al., CHARACTERIZATION OF SB ATOMIC-LAYER-DOPED SI(100) CRYSTAL BY X-RAY STANDING WAVE METHOD, JPN J A P 1, 32(4), 1993, pp. 1772-1774
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
4
Year of publication
1993
Pages
1772 - 1774
Database
ISI
SICI code
Abstract
We applied the X-ray standing wave method to the determination of the Sb position in atomic-layer-doped Si crystal. From the fitting of the calculated with the experimental results, an extension of 0.03 and a c oherent ratio of 86% were obtained.