DIFFUSION AND OUTDIFFUSION OF ALUMINUM IMPLANTED INTO SILICON

The diffusion of aluminium in single-crystal silicon has been studied in the temperature range 1000-1290-degrees-C. A low implantation dose (1 X 10(14) Al cm-2) was used to avoid dopant precipitation and a high energy (6.0 MeV) to reduce the influence, if any, of the surface. The experimental profiles, measured by spreading resistance, have been fi tted taking into account the escape of Al from the Si surface into the ambient atmosphere. A pre-exponential value of 8.88 cm2 s-1 and an ac tivation energy of 3.44 eV have been found in this experiment. When al uminium is implanted through a capping layer, a reduction of the resid ual amount has been observed at medium energy (300 keV), while no diff erence has been measured at high energy (6 MeV).