CONTROL OF TERRACE WIDTH AND ATOMIC STEP DISTRIBUTION ON VICINAL SI(111) SURFACES BY THERMAL-PROCESSING

Authors
OMAHONY JD MCGILP JF LEIBSLE FM WEIGHTMAN P FLIPSE CFJ
Citation
Jd. Omahony et al., CONTROL OF TERRACE WIDTH AND ATOMIC STEP DISTRIBUTION ON VICINAL SI(111) SURFACES BY THERMAL-PROCESSING, Semiconductor science and technology, 8(4), 1993, pp. 495-501
Citations number
38
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
4
Year of publication
1993
Pages
495 - 501
Database
ISI
SICI code
0268-1242(1993)8:4<495:COTWAA>2.0.ZU;2-G
Abstract
Si(111) surfaces misoriented by 4-degrees towards [112] have been stud ied by scanning tunnelling microscopy. Topographs of surfaces, produce d by annealing, followed by rapid quenching, reveal a temperature-depe ndent transition from a structure consisting of wide irregular terrace s separated by small irregular clusters of double steps to a single hi ghly ordered phase of narrow, evenly spaced terraces separated by sing le monatomic steps. The quenched-in phases are stable at room temperat ure.