GROWN-IN POINT-DEFECTS IN VAPOR-PHASE EPITAXIAL GAAS0.6P0.4-TE

Deep-level transient spectroscopy (DLTS) has been employed to study gr own-in point defects in vapour phase epitaxial layers of GaAs0.6P0.4: Te. It was found that for the Ga-rich vapour phase three electron trap s T1 (0.20 eV), T2 (0.18 eV) and T3 (0.38 eV) are formed. The traps T1 and T2 were found to be donor-related and are tentatively identified as Te(As)GA(As)Te(As) and O(i)Te(As) complexes, respectively. The trap T3 was found to be dependent on the dislocation density and it is pos sibly associated with either an As or P vacancy generated by the incre ase in misfit dislocations. A detrimental effect of these defects on t he radiative recombination efficiency is shown. Under an excess of the group V elements in the vapour phase, only one electron trap T4 (0.18 eV) was observed.