ADMITTANCE SPECTROSCOPY OF DEFECTS IN ELECTRON-IRRADIATED INDIUM-PHOSPHIDE

Authors
THOMAS H LUO JK
Citation
H. Thomas et Jk. Luo, ADMITTANCE SPECTROSCOPY OF DEFECTS IN ELECTRON-IRRADIATED INDIUM-PHOSPHIDE, Semiconductor science and technology, 8(4), 1993, pp. 608-610
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
4
Year of publication
1993
Pages
608 - 610
Database
ISI
SICI code
0268-1242(1993)8:4<608:ASODIE>2.0.ZU;2-X
Abstract
Admittance spectroscopic assessment of Au/p-InP structures has reveale d two new hole defects HD1 and HD2, following 1 MeV electron radiation of fluence 10(16) cm-2 . These defects were found to be different fro m the previously reported hole defects H3 and H4, and were responsible for the removal of most carriers, hence the increase of the series re sistance and the degradation of solar cell efficiency. The defect HD1 showed a recovery threshold annealing temperature of approximately 70- degrees-C and was completed by 100-degrees-C after 10 minutes annealin g. This annealing behaviour corresponded to the recovery of the remove d carriers.