HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI SI0.87GE0.13/SI HETEROSTRUCTURE/

Authors
WHALL TE SMITH DW PLEWS AD KUBIAK RA PHILLIPS PJ PARKER EHC
Citation
Te. Whall et al., HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI SI0.87GE0.13/SI HETEROSTRUCTURE/, Semiconductor science and technology, 8(4), 1993, pp. 615-616
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
4
Year of publication
1993
Pages
615 - 616
Database
ISI
SICI code
0268-1242(1993)8:4<615:HHMIAP>2.0.ZU;2-L
Abstract
We report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in inter face charge, and that the mobility is now limited by interface roughne ss scattering.