Dj. Goyal et al., DOPANT INDUCED MODIFICATIONS IN THE PHYSICAL-PROPERTIES OF SPRAYED ZNOIN FILMS, Journal of materials research, 8(5), 1993, pp. 1052-1056
Indium-doped zinc oxide (IZO) films were prepared by the spray pyrolys
is technique. The effect of gradual incorporation of indium cations on
the structural, electrical, and compositional properties of IZO films
was studied in detail. It was observed that even a small addition of
indium modifies the preferred growth of IZO film from the [002] direct
ion to the [101] direction. Such a modification in growth pattern is a
result of more nucleating centers created by indium doping. Indium do
pant improves the electrical properties of the films. The carrier conc
entration depends mainly on the indium dopant level while the mobility
is affected by the changes in crystal orientation that take place due
to addition of dopants. X-ray photoelectron spectroscopy results show
that indium doping does not lead to any stoichiometric changes in the
IZO films and the dopant incorporation in the film is linearly propor
tional to that in the solution.