HIGH-SPEED SUBHALF MICRON SATURN TRANSISTOR USING EPITAXIAL BASE TECHNOLOGY

Selective epitaxial growth technology has been extended to the base fo rmation of a transistor on the basis of the SATURN (Self-Alignment Tec hnology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, c oupled with SIC (Selective Ion-implanted Collector) fabricated by low- energy ion implantation, has not only narrowed the transistor active r egions but has drastically reduced the base width. A final base width of 800 angstrom and a maximum cut-off frequency of 31 GHz were achieve d.