STRESS BEHAVIOR OF TIN FILMS FORMED BY REACTIVE ION-BEAM-ASSISTED DEPOSITION

Authors
WANG X LIU XH YANG GQ ZHENG ZH HUANG W ZOU SH
Citation
X. Wang et al., STRESS BEHAVIOR OF TIN FILMS FORMED BY REACTIVE ION-BEAM-ASSISTED DEPOSITION, Materials letters, 16(4), 1993, pp. 185-188
Citations number
11
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
16
Issue
4
Year of publication
1993
Pages
185 - 188
Database
ISI
SICI code
0167-577X(1993)16:4<185:SBOTFF>2.0.ZU;2-8
Abstract
The effect of ion species and ion energy on the intrinsic stress in Ti N films formed by reactive ion-beam-assisted deposition has been exami ned. The result shows that the stress changes from tensile to compress ive and increases in magnitude with increasing ionic mass and ion ener gy. This stress annealing is considered to be momentum controlled.