DIFFRACTION QUASI-OPTICAL BLOCK FOR INVESTIGATING SEMICONDUCTOR-MATERIALS

A device for simultaneously measuring the surface and bulk characteris tics of semiconductor materials in a magnetic field of 0-7 T and over a temperature interval of 0.3 less-than-or-equal-to T less-than-or-equ al-to 77-degrees-K is described. The modified microwave method of dete cting the disturbed total internal reflection at a wavelength of 2 mm is used to study the surface properties, while the bulk properties are measured by the Hall method. The bulk and surface kinetic coefficient s for solid solutions of the triple compounds Hg1-xTeCdx and Hg1-xMnxT e are given as functions of temperature.