The reactions SiH3+O2 and SiH3+NO2 were studied over the temperature r
ange 235-512 K using time-resolved infrared diode laser absorption spe
ctroscopy. Observed rate constants are k(SiH3+O2)=(2.07+/-0.34)x10(-12
)exp[(469+/-60)/T] and k(SiH3+NO2)= (2.25+/-0.48)x10(-11)exp[(264+/-80
)/T] cm3 molecule-1 s-1. These results are consistent with initial SiH
3O2 and SiH3NO2 adduct formation followed by possible rearrangement an
d subsequent dissociation.