OXIDATION MECHANISMS OF HAFNIUM CARBIDE AND HAFNIUM DIBORIDE IN THE TEMPERATURE-RANGE 1400-DEGREES TO 2100-DEGREES-C

Authors
BARGERON CB BENSON RC NEWMAN RW JETTE AN PHILLIPS TE
Citation
Cb. Bargeron et al., OXIDATION MECHANISMS OF HAFNIUM CARBIDE AND HAFNIUM DIBORIDE IN THE TEMPERATURE-RANGE 1400-DEGREES TO 2100-DEGREES-C, Johns Hopkins APL technical digest, 14(1), 1993, pp. 29-36
Citations number
NO
Categorie Soggetti
Physics, Applied","Multidisciplinary Sciences
Journal title
Johns Hopkins APL technical digest → ACNP
ISSN journal
02705214
Volume
14
Issue
1
Year of publication
1993
Pages
29 - 36
Database
ISI
SICI code
0270-5214(1993)14:1<29:OMOHCA>2.0.ZU;2-W
Abstract
Two ultra-high-temperature materials, hafnium carbide and hafnium dibo ride, were oxidized in the temperature range 1400 to 2100-degrees-C. T he two materials oxidized in distinctly different ways. The carbide fo rmed a three-layer system consisting of a layer of residual carbide, a layer of reduced (partially oxidized) hafnium oxide containing carbon , and a layer of fully oxidized hafnium dioxide. The diboride oxidized into only two layers. For the diboride system, the outer layer, mainl y hafnium dioxide, contained several intriguing physical structures.