CHARACTERIZATION OF FUNDAMENTAL PARAMETERS OF A SEMICONDUCTOR-LASER WITH AN INJECTED OPTICAL PROBE

Authors
LIU JM SIMPSON TB
Citation
Jm. Liu et Tb. Simpson, CHARACTERIZATION OF FUNDAMENTAL PARAMETERS OF A SEMICONDUCTOR-LASER WITH AN INJECTED OPTICAL PROBE, IEEE photonics technology letters, 5(4), 1993, pp. 380-382
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
4
Year of publication
1993
Pages
380 - 382
Database
ISI
SICI code
1041-1135(1993)5:4<380:COFPOA>2.0.ZU;2-J
Abstract
A simple technique using a direct optical probe is demonstrated for pa rasitic-free characterization of many intrinsic laser parameters, incl uding the relaxation resonance frequency, the relaxation rate, the dif ferential and nonlinear gain parameters, the linewidth enhancement fac tor, and the carrier and photon lifetimes. It consists of a single exp erimental setup and is broadly applicable to semiconductor lasers of d ifferent wavelengths and different dynamic bandwidths.