ANALYSIS ON FM EFFICIENCY OF INGAAS INGAASP SCH-MQW LDS TAKING INJECTION CARRIER TRANSPORT INTO ACCOUNT/

FM efficiencies of InGaAs/InGaAsP separate-confinement-heterostructure multiple-quantum-well laser diodes (SCH-MQW LD's) were theoretically analyzed taking carrier transport in the SCH layer into account. It wa s found for the first time that injection carrier transport from the S CH layers to the wells plays an important role in the FM response, due to a finite carrier capture time. The calculated values for FM effici ency were in excellent agreement with measured values for LD's with di fferent SCH layer thicknesses, which indicates that a thick SCH layer is desirable for high FM efficiency operation.