KINETICS OF TISI2 THIN-FILM FORMATION AT A SINGLE-CRYSTAL SILICON SURFACE BY TI ION IRRADIATION

In the present study a general growth sequence is noted in which thin amorphous Ti films are formed at initial stages (the growth kinetic is described by a straight-line dependence). Complicated phases of silic ides grow subsequently in accordance with Avrami's equation. The proce ss of subsequent dissolution leads to the nucleation and growth of a T i-Si2 film (thermodynamically stable compound). The growth kinetics at this stage are described by a parabolic law. A phenomenological model has been proposed allowing us to estimate some characteristics and pa rameters of the process.