OXYGEN-INDUCED RECONSTRUCTION OF RH(110) AND (113) SINGLE-CRYSTAL PLANES

Citation
C. Voss et al., OXYGEN-INDUCED RECONSTRUCTION OF RH(110) AND (113) SINGLE-CRYSTAL PLANES, Applied surface science, 67(1-4), 1993, pp. 142-146
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01694332
Volume
67
Issue
1-4
Year of publication
1993
Pages
142 - 146
Database
ISI
SICI code
0169-4332(1993)67:1-4<142:ORORA(>2.0.ZU;2-V
Abstract
The interaction of oxygen with Rh field emitter surfaces has been inve stigated by means of field ion microscopy (FIM). It has been found tha t the field-free exposure of 20 L (1 L = 1.3 x 10(-4) Pa . s) oxygen t o samples at temperatures between 400 and 500 K leads to the reconstru ction of individual surface planes. In particular, the stepped Rh{110} and {113} surface planes exhibit ''missing-row'' or (n x 2) and (n x 3) facet structures, whereby n = 1, 2. These structural changes are th ermally activated and do not occur at temperatures below 400 K. Stable micrographs with insignificant species desorption during Ne imaging h ave been obtained after post-dosing 2 L CO to the oxygen-covered surfa ce at cryogenic temperatures.