SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER JUNCTIONS BY SCANNING-TUNNELING-MICROSCOPY

Authors
SCHONENBERGER C VANHOUTEN H KERKHOF JM DONKERSLOOT HC
Citation
C. Schonenberger et al., SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER JUNCTIONS BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 67(1-4), 1993, pp. 222-227
Citations number
30
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
67
Issue
1-4
Year of publication
1993
Pages
222 - 227
Database
ISI
SICI code
0169-4332(1993)67:1-4<222:STIDJB>2.0.ZU;2-T
Abstract
Ultrasmall (less than or similar to 5 nm in lateral diameter) double-b arrier tunnel junctions have been realized using a scanning tunneling microscope and an optimized metal-particle-oxide-metallic substrate sy stem. The effects of single-electron charging (single-electron tunneli ng) on the current-voltage characteristics are studied experimentally at 4.2 K. The circumstances under which a Coulomb staircase is observa ble for this kind of model systems is investigated systematically, usi ng the orthodox theory of single-electron tunneling to analyze the dat a.