45-DEGREES GRAIN-BOUNDARY JUNCTIONS IN (001)-ORIENTED BISRCACUO FILMS

Citation
T. Takami et al., 45-DEGREES GRAIN-BOUNDARY JUNCTIONS IN (001)-ORIENTED BISRCACUO FILMS, JPN J A P 2, 32(4B), 1993, pp. 583-585
Citations number
16
Categorie Soggetti
Physics, Applied
Volume
32
Issue
4B
Year of publication
1993
Pages
583 - 585
Database
ISI
SICI code
Abstract
In this study, 45-degrees-rotated [001] tilt boundary junctions were f abricated by controlling the in-plane epitaxy using an MgO seed layer grown on an SrTiO3(001) substrate. The in-plane preferential orientati on of the BiSrCaCuO film (2223 composition) grown on the MgO seed laye r on the SrTiO3(001) substrate of BiSrCaCuO [100], [010]//MgO[100]//Sr TiO3[100] was found using X-ray diffraction. The 45-degrees-rotated [0 01] tilt boundary junction in the BiSrCaCuO film exhibited RSJ-like be havior. With the use of these junctions, a dc SQUID was fabricated and operated at temperatures up to 65 K.