In this study, 45-degrees-rotated [001] tilt boundary junctions were f
abricated by controlling the in-plane epitaxy using an MgO seed layer
grown on an SrTiO3(001) substrate. The in-plane preferential orientati
on of the BiSrCaCuO film (2223 composition) grown on the MgO seed laye
r on the SrTiO3(001) substrate of BiSrCaCuO [100], [010]//MgO[100]//Sr
TiO3[100] was found using X-ray diffraction. The 45-degrees-rotated [0
01] tilt boundary junction in the BiSrCaCuO film exhibited RSJ-like be
havior. With the use of these junctions, a dc SQUID was fabricated and
operated at temperatures up to 65 K.