X-RAY EVALUATION OF MICROROUGHNESS OF MECHANOCHEMICALLY POLISHED SILICON SURFACES

Microroughness of mechanochemically polished (100) silicon surfaces ha s been determined from X-ray reflectivity data. An optical interferome ter showed equally smooth surfaces (3 approximately 4 angstrom rms) fo r all samples examined. X-ray Fresnel reflectivity data revealed disti nct decay features of the scattering profiles from samples polished us ing different relative strengths of mechanical and chemical factors. P rofile fits were used to evaluate the Gaussian rms roughness at 11 app roximately 12 angstrom under oxide layers of a density close to 2.0 g/ cm3. A stoichiometry not far from that of SiO2 was found for the overl ayer oxide.