RBS CHANNELING STUDY OF THE CRYSTALLOGRAPHIC CORRELATION FOR EPITAXIAL CEO2 ON SI

Epitaxially grown CeO2 layers on (100) Si substrates are analyzed usin g the Rutherford backscattering spectrometry combined with the channel ing technique. By construction of stereographic projections for CeO2 l ayers and Si substrates from channeling dip patterns, the correlations between overgrown layers and substrates are clearly revealed: CeO2 la yers on (100) Si substrates have the (110) orientation. It has also be en revealed that CeO2 has a double domain structure: [001] CeO2 parall el-to [011BAR] Si and [110BAR] CeO2 parallel-to [011BAR] Si, whereas p lanes of (110) in CeO2 and (100) in Si are parallel in both configurat ions. It is reported that in this system the (110) epitaxial orientati on is not exactly parallel to the (100) orientations in Si.