Epitaxially grown CeO2 layers on (100) Si substrates are analyzed usin
g the Rutherford backscattering spectrometry combined with the channel
ing technique. By construction of stereographic projections for CeO2 l
ayers and Si substrates from channeling dip patterns, the correlations
between overgrown layers and substrates are clearly revealed: CeO2 la
yers on (100) Si substrates have the (110) orientation. It has also be
en revealed that CeO2 has a double domain structure: [001] CeO2 parall
el-to [011BAR] Si and [110BAR] CeO2 parallel-to [011BAR] Si, whereas p
lanes of (110) in CeO2 and (100) in Si are parallel in both configurat
ions. It is reported that in this system the (110) epitaxial orientati
on is not exactly parallel to the (100) orientations in Si.