THE DISORDER EFFECT ON THE ELECTRON AND POSITRON STRUCTURE IN THE SEMICONDUCTOR ALLOY INXGA1-XSB

We have obtained the electron and positron band structure and charge d ensities in InxGa1-xSb from wavefunctions derived in a model pseudo-po tential bandstructure calculation coupled with the virtual-crystal app roximation which incorporates compositional disorder as an effective p otential. We find that the electron is more sensitive to the method us ed than the positron. The results are used to analyze the dependence o f the positron effect in semiconductor alloys. Copyright (C) 1996 Else vier Science Ltd