INGAAS GAAS STRAINED QUANTUM WIRE LASERS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION ON NONPLANAR SUBSTRATES/

The structure and device characteristics of InGaAs/GaAs strained quant um wire (QWR) lasers grown by organometallic chemical vapor deposition on 0.25-mum pitch periodic corrugations are reported. The crescent-sh aped InGaAs wires, 14-17 nm thick and 70-80 nm in full width, are form ed in situ due to surface diffusion of In and Ga species to the bottom of the grating grooves. Room-temperature pulsed operation has been ac hieved with threshold current densities of 1.9 kA/cm2 for 1.1 mm long lasers with uncoated facets. For laser stripes aligned perpendicular t o the wires, the lasing wavelength remains almost constant at 920 nm f or temperatures 80 < T < 150 K due to second-order Bragg reflection fr om the QWR array. The possibility of achieving gain-coupled distribute d feedback using the periodic gain modulation in these devices is disc ussed.