KRF EXCIMER-LASER PROJECTION PATTERNED DEPOSITION OF ALUMINUM FROM TRIETHYLAMINE ALANE AS ADSORBATE PRECURSOR

Authors
Citation
F. Foulon et M. Stuke, KRF EXCIMER-LASER PROJECTION PATTERNED DEPOSITION OF ALUMINUM FROM TRIETHYLAMINE ALANE AS ADSORBATE PRECURSOR, Applied physics letters, 62(18), 1993, pp. 2173-2175
Citations number
29
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
18
Year of publication
1993
Pages
2173 - 2175
Database
ISI
SICI code
0003-6951(1993)62:18<2173:KEPPDO>2.0.ZU;2-C
Abstract
KrF pulsed excimer laser-induced decomposition of the triethylamine al ane [(C2H5)3NAlH3] precursor in the adsorbed phase is shown to allow p rojection patterned deposition of Al at room temperature. The deposite d height increases linearly with the laser energy dose suggesting that the decomposition is photolytically driven. Mirrorlike Al films are d eposited at rates up to about one Al monolayer per pulse which corresp onds to rates up to 2 mum/min when photolyzing at 1 00 Hz. Al films wi th good adhesion and resistivities down to 7.5 muOMEGA cm (2.5 times b ulk), were deposited on quartz, Al2O3, and GaAs substrates. The proces s has good spatial selectivity. Patterns with 1 mum resolution have be en generated.