HIGH-TEMPERATURE CONTINUOUS OPERATION ABOVE 200-DEGREES-C OF GAAS-LASERS USING AN INGAALP CLADDING LAYER

A new GaAs laser diode employing InGaAlP for the cladding layer has be en successfully fabricated. A large band-gap difference between the Ga As active and InGaAlP cladding layers reduced the electron overflow, w hich drastically improved the temperature characteristics. The highest temperature continuous wave operation of 212-degrees-C was obtained. A large characteristic temperature, T0 of 190 K was maintained up to 1 40-degrees-C. Any significant problem due to a heterointerface of Ga-A s/InGaAlP including high Al composition was not observed through the l aser characteristics.