LOCAL SILICON MOLECULAR-BEAM EPITAXY WITH MICROSHADOW MASKS

Authors
HAMMERL E EISELE I
Citation
E. Hammerl et I. Eisele, LOCAL SILICON MOLECULAR-BEAM EPITAXY WITH MICROSHADOW MASKS, Applied physics letters, 62(18), 1993, pp. 2221-2223
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
18
Year of publication
1993
Pages
2221 - 2223
Database
ISI
SICI code
0003-6951(1993)62:18<2221:LSMEWM>2.0.ZU;2-8
Abstract
A novel method for the in situ patterning of silicon layers grown by m olecular beam epitaxy is investigated. Using microshadow masks deposit ed directly onto silicon substrate epitaxial mesa patterns can be fabr icated. The local growth and the resulting geometrical shape of the me sa structures is studied as a function of the substrate temperature du ring the MBE process.