EFFECT OF ELECTRON HEATING ON ELECTRON-CAPTURE CROSS-SECTION IN VERY SMALL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

The effect of electron heating on random telegraph signals due to oxid e traps in deep-submicron n-channel MOSFETs is shown. A simple theoret ical model gives a good description of the observed results. The mean capture time depends on the local velocity and temperature of channel electrons near the trap. The difference between the forward and revers e mode (source and drain exchanged) provides an estimate of the trap l ocation along the channel.