ELECTRICAL-PROPERTIES OF THE SINX INP INTERFACE PASSIVATED USING H2S/

Passivation of the electronic defect states at the SiN(x)/InP interfac e has been achieved using gaseous H2S treatments of the InP surface. A l/SiN(x)/InP capacitors, fabricated by depositing silicon nitride film s on the H2S-treated InP, exhibit good capacitance-voltage (C-V) chara cteristics. The SiN(x) layer is deposited at 200-degrees-C using an el ectron cyclotron resonance plasma-enhanced chemical vapor deposition ( ECR-PECVD) technique. A minimum trap density of 3.5 X 10(11) cm-2 eV-1 is estimated using the high-frequency C-V characteristics. These devi ces appear to be more uniform and reproducible than ammonium/phosphoro us polysulfide-passivated SiN(x)/InP interfaces.