MICROANALYSIS OF MOCVD TREATED POROUS SILICON

A silicon wafer was prepared to form isolated, single crystal silicon islands 0.22 mum thick with lateral dimensions varying between 1 and 4 50 mum, using the n-/n+/n- porous silicon processing technique. The wa fer was cut in 1 cm2 sections and exposed to the HCo(CO)4 organometall ic precursor during MOCVD processing. Nuclear microanalysis using 2 Me V alpha-particles revealed cobalt penetration of up to 60 mum under la rge island structures. This was subsequently shown to be a result of t he precursor penetrating underneath damage regions of the island creat ed during the anodisation treatment, and not due to precursor penetrat ing 60 mum down a single pore.