OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS

Authors
KINOMURA A LOHNER T KATAYAMA Y TAKAI M RYSSEL H SCHORK R CHAYAHARA A HORINO Y FUJII K SATOU M
Citation
A. Kinomura et al., OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 77(1-4), 1993, pp. 369-372
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
77
Issue
1-4
Year of publication
1993
Pages
369 - 372
Database
ISI
SICI code
0168-583X(1993)77:1-4<369:OOBOLI>2.0.ZU;2-E
Abstract
Buried oxide layers formed by implantation in silicon were observed by microprobe RBS with 1.5 MeV He+. A cross-sectional image of a local o xide layer was obtained by imaging the decrease in silicon signals. Un iformly implanted samples annealed at 1260 and 1300-degrees-C were obs erved by RBS-mapping images. A nonuniform region, indicating the absen ce of surface silicon, was found in the mapping images for annealing a t 1260-degrees-C, while the buried and surface layers for annealing at 1300-degrees-C were found to be uniform.