REGROWTH ZONES IN LASER ANNEALED, RADIATION DAMAGED DIAMOND

Focused laser annealing of ion implanted diamond with a 15 mum diamete r laser spot produces a variety of effects that depend on the power de nsity of the laser. Channeling contrast microscopy (CCM) provides a re latively straightforward, rapid method to analyse the annealed regions of the diamond to characterize the effects. In order of increasing la ser power density, effects that are observed include: regrowth of the end of range damage of the ion implantation, formation of a buried gra phitic layer and complete graphitization of the surface of the diamond down to the bottom of the original damage layer. Information provided by CCM leads to an understanding of the causes of these effects and p rovides insight into the carbon phase diagram in the neighbourhood of the graphite to diamond phase transition. Analysis of the effects of l aser annealing by CCM are complicated by the swelling of the diamond l attice caused by the original ion implantation, compaction following r egrowth and the effect of the analysis beam irradiation itself.