HE+ AND H+ MICROBEAM DAMAGE, SWELLING AND ANNEALING IN DIAMOND

The effects of scanned 2 MeV He+ and 1.4 MeV H+ microbeam irradiation on unimplanted and P implanted diamond were characterized. Although di amond was found to be resistant to lattice defect production, it was f ound to swell very rapidly in comparison with other materials, giving rise to serious swelling induced dechanneling at scan edges at relativ ely low doses (10(17)/cm2 for 2 MeV He+). Microbeams annealed the dama ge due to a 1.5 mum deep phosphorus implantation at a dose of 10(15) p +/cm2. The implantation damage was reduced at a dose of (1.6 x 10(17)/ cm2 ) by up to 21 % for 2 MeV He+ irradiation, up to 16% for high flux 1.4 MeV H+ irradiation and 12% for low flux H+ irradiation. For the c hoice of analysis beam, all these beam effects were found to be most s ignificant for He+ microbeams, so H+ microbeams should be used for ana lysis of diamond unless high depth resolution is required.