EFFECTS OF TOTAL-DOSE IRRADIATION ON GATE-ALL-AROUND (GAA) DEVICES

The response of Gate-All-Around MOS transistors to dose irradiation is quite different from that observed on other types of Silicon-On-Insul ator MOSFETs. Indeed, in regular SOI MOSFETs, edge leakage increases s ubstantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the op posite way: the shift of edge threshold voltage upon creation of charg es in the oxide is smaller than that of the main transistor. As a resu lt, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold kink of GAA devices disappears when the device is irradiated.