MECHANISMS OF SYNCHROTRON RADIATION-EXCITED ETCHING REACTIONS OF SEMICONDUCTOR-MATERIALS

Synchrotron radiation-excited etching of semiconductor materials inclu ding SiO2 and SiC is studied to clarify the mechanisms of the etching processes, Synchrotron radiation (SR) was shone upon SiO2 and SiC surf aces in SF6 atmosphere, and the etch rates against SF6 pressure and th e cross-sectional profiles of the etched surfaces for different light spectra were measured. From the obtained results it is concluded that excitation of the surface by SR is essential and is the rate determini ng step when the etchant pressure is high enough. We have proposed a s imple reaction model for the SR-excited etching of the insulator surfa ce that the excitation of the outermost layer is essential in the etch ing reaction.