TEMPERATURE-DEPENDENCE OF SYNCHROTRON RADIATION-INDUCED GROWTH INITIATION IN THE MOLECULAR-BEAM CHEMICAL-VAPOR DEPOSITION OF AL ON A SIO2 SURFACE

Synchrotron radiation (SR) irradiation effect in the Al thermal growth on a SiO2 surface is studied by using a molecular-beam chemical vapor deposition (MB-CVD) technique. Al growth is observed only on the SR-i rradiated area at 200-degrees-C. The substrate temperature dependence of the SR-assisted Al growth rate is found to be non-monotonous: it ri ses from 150-degrees-C to reach a peak at 250-degrees-C, then falls to reach a minimum at 300-degrees-C, and rises again over 300-degrees. T he origins of this non-monotonous temperature dependence are investiga ted by chemical shifts analysis in Auger electron spectroscopy (AES). We find that the peculiar temperature dependence is attributed to the change of the chemical bonding nature of the initiation layers formed by SR irradiation.