PULSED-LASER CRYSTALLIZATION AND DOPING FOR THE FABRICATION OF HIGH-QUALITY POLY-SI TFTS

We review the various applications of pulsed lasers, working in the na nosecond regime, to prepare high-quality poly-Si TFTs. It is shown tha t the best device performances (field-effect mobilities in excess of 1 40 cm2/V - s) are achieved by pulsed excimer laser crystallization of unhydrogenated amorphous Si thin films. In addition, for source and dr ain formation, we demonstrate that the excimer laser induced diffusion of dopant from a solid source (spin-on phosphorus-doped silicate glas s) is very attractive to achieve good electrical properties of the n-c hannel TFTs.